Technology. Accessed from Low Frequency Noise Modeling in Single- and Double-Gate MOSFETs

Abstract

A journey is easier when you travel together. Interdependence is certainly more valuable than independence. This thesis is the result of two years of work whereby I have been accompanied and supported by many people. It is a pleasant aspect that I have now the opportunity to express my gratitude for all of them. I would first like to offer my sincere thanks and gratitude towards Dr. Syed Islam without whose guidance, stimulating suggestions, encouragement and help this work could not have been accomplished. During these years I have known Dr. Islam as a very caring and principle-centered person. His overly enthusiasm and integral view on